inchange semiconductor isc product specification isc silicon npn power transistor BDT91F/93f/95f description dc current gain- h fe = 20~200@ i c = 4a collector-emitter sustaining voltage- : v ceo(sus) = 60v(min)- BDT91F; 80v(min)- bdt93f; 100v(min)- bdt95f complement to type bdt92f/94f/96f applications designed for use in audio output stages and general amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BDT91F 60 bdt93f 80 v cbo collector-base voltage bdt95f 100 v BDT91F 60 bdt93f 80 v ceo collector-emitter voltage bdt95f 100 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current-continuous 4 a p c collector power dissipation @ t c =25 32 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDT91F/93f/95f electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDT91F 60 bdt93f 80 v ceo(sus) collector-emitter sustaining voltage bdt95f i c = 100ma ; i b = 0 100 v v ce( sat )-1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1 v v ce( sat )-2 collector-emitter saturation voltage i c = 10a; i b = 3.3a 3 v v be( on ) base-emitter on voltage i c = 4a; v ce = 4v 1.6 v i cbo collector cutoff current v cb = v cbomax ; i e = 0 v cb = 1 / 2 v cbomax ; i e = 0,t j =150 0.1 5 ma i ceo collector cutoff current v ce = v ceomax v; i b = 0 1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1 ma h fe-1 dc current gain i c = 4a ; v ce = 4v 20 200 h fe-2 dc current gain i c = 10a ; v ce = 4v 5 f t current-gain?bandwidth product i c = 500ma ; v ce = 10v 4 mhz switching times t on turn-on time 0.5 1 s t off turn-off time i c = 4a; i b1 = -i b2 = 0.4a 2 4 s isc website www.iscsemi.cn 2
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